الفهرس 
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Abstract
This thesis discusses the problems of Al-p type Si contact resistance under heat treatment and evaluates the instrumental conditions for that problem.
It consists of three chapters; Chapter one was deals with some theoretical aspects on the metal-semiconductor contact. These discussed topics could be classified in three groups.
The first one deals with the energy band relation of the metal-semiconductor contact, the formation of Schottky barrier height, the two type contacts, the definition ’of the ohmic contact and its importance and the effect of heat treatment on Al-Si system.
The second group deals with the current transport analysis which includes the different mechanisms : (emission over the barrier (T.E.), tunnelling through the barrier (F.E., T.F.E.). The theory which investigates the above mechanisms were both diffusion and thermionic emission.
The third group deal with the contact resistance analysis for both point and planer contact. Further, this group deal with the measurement methods and technique. The two basic measurement methods are the three contact and four circular contact methods used in this study.
Chapter two covers the experimental study, where it can be divided into six groups. The first was for the sample preparation