الفهرس 
Model based on suface photovoltagesOnly 14 pages are availabe for public view
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Abstract
Ternary Zn Sx Sel-x solid solutions (0 ,< x ,< 1) were prepared from these compositions thin films of different thickness were prepared in vacuum of lo-’ Torr by thermal evaporation. Structural investigation of Zn Sx Sel-x solid solutions in thin film form was performed. Throughout this investigating it was found that Zn Sx Sel-x thin films have polycrystalline structure. It was found also that both the film thickness and the ZnS content are of the most important parameters affecting the film structure; The lattice parameters a and c as well as the crystalitte size increase with increasing the film thickness and decreasing the ZnS content. The dark electrical resistivity dependence on the sample temperature was found to have the some behaviour for Zn Sx Sel-x thin films of different compositions. The dark electrical resistivity of each film decreases exponeonentially with increasing the film temperature. The thermal coefficient of resistivity has the some behaviour for all Zn Sx Sel-x thin films of different compositions the observed behaviour of TCR is typical for semiconducting Matterials.