الفهرس 
Energy and development of mankindOnly 14 pages are availabe for public view
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Abstract
the physical properties of CdS thin film (as a \\:indow layer) & CuInSe2 h film ( as an absorber layer ) of heterojunction solar cell were studed . The spectral transmittance , X-ray difK-action (XRD) , energy dspersive X-ray (EDX) and the sheet resistance of both ~naterials were measured . The first part of tlvs research was the preparation and characterization of CdS films. CdS films were prepared by two dfferent techniques . Films grown on cold substrate by thermal evaporation and annealed at 380’~ have sheet resistance of 99.1 Kfi/O and 444 KQ /@ respectively and optical transmittance up to 95% . Energy band gaps equal or close to that of bulk material ( 2.42 eV) were obtained for annealed these films. The grain size of CdS films have been to increase with increasing annealing temperature . The optical constants n, k and a were found to be approached to that of bulk CdS when films annealed at 380’~.< dS films have beeqalso, prepared by solution growth techque. It was found that the pH value and the process time affect the transmittance of the prepared films . The pH-value affects in addtion the reaction temperature. Prepared films by hste chque have a band gap value close to that of bulk material (2.42 eV) as long as the process time is greater than 40 min. XRD pattern of films prepared at process time lower than 40 min. revealed a characteristic peaks of Cd element inhcating that a non stoichiometric film.