الفهرس | Only 14 pages are availabe for public view |
Abstract Plasmonic Photovoltaic is apromising way to enhance the thin {uFB01}lm photovoltaic(PV) e{uFB03}ciency. Gear shape nanoparticles are introduced to enhance the PV e{uFB03}ciency via increasing the power absorbed by the PV semiconductor in the visible and near infrared ranges. The modes of the gear nanoparticles are investigated. A parametric study is performed that demonstrates how the design parameters of the proposed nanoparticles can be engineered for best power absorption within Si. A Figure of Merit (FoM) is de{uFB01}ned that consider all objectives. An optimization process is carried out and the optimum gear{u2019}s dimensions, penetration depth, and periodicity are obtained for the maximum FoM. Then, a model for PIN-PV with embedded gear nanoparticles is presented for 1D and 2D structures. The enhancement of the embedded gear nanoparticles on the J-V characteristics of the PV is studied, and J-V characteristics corresponding to maximum FoM is presented |