![]() | Only 14 pages are availabe for public view |
Abstract Short channel HOSFETs are sometimes called micro-MOS or submicro MOS. These submicronic MOSFETs are obtained by reducing the geometric dimensions of MOS transistors down to a fraction of micrometer for the channel length and to a fraction of nansmeter· for the oxide thl cKness. Although those structures prov1de several advantages, lt has been obserevd that ~orne degradations ar•e assocla•~ed With them; these are the mobility degradation, instability and the posslbility of mul t iplicatlon. However the threshold voltage occurence of SUl’face subm.l.croruc MOSFETs contribute greatly to the developement of the recently known MOSFET VLSI technole>gy. The hot carrier inJection from the MOSFET cllannel 1nto the ox1de layer has been observed to be associated with the subm1cron1c MOSFETs and it causes new reliabilitY problems for MOS aev ices and lntegr·ated c1rcu1 ts, This new pr,enomena disturbs the linearity of the aev1ce characteristics and en1lances the threshold voltage instability. However this phenomena found many original fields of applications. It can be used to e1ectr1callY program and erase some types of nonvolatile memor1es. It can also be used to compensate for the offset voltage of the very low level signal, high gain operational amplifiers. Moreover correction ot linearity erl’Or in A/D converters could be achieved using the llot carr·~er injection phenomena, [ 15, 20, 23, 45, 57, 58]. |