الفهرس 
INTRODUCTIONOnly 14 pages are availabe for public view
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Abstract
Short channel HOSFETs are sometimes called micro-MOS or
submicro MOS. These submicronic MOSFETs are obtained by
reducing the geometric dimensions of MOS transistors down to
a fraction of micrometer for the channel length and to a
fraction of nansmeter· for the oxide thl cKness. Although
those structures prov1de several advantages, lt has been
obserevd that ~orne degradations ar•e assocla•~ed With them;
these are the mobility degradation,
instability and the posslbility of
mul t iplicatlon. However
the threshold voltage
occurence of SUl’face
subm.l.croruc MOSFETs
contribute greatly to the developement of the recently known
MOSFET VLSI technole>gy.
The hot carrier inJection from the MOSFET cllannel 1nto
the ox1de layer has been observed to be associated with the
subm1cron1c MOSFETs and it causes new reliabilitY problems
for MOS aev ices and lntegr·ated c1rcu1 ts, This new pr,enomena
disturbs the linearity of the aev1ce characteristics and
en1lances the threshold voltage instability. However this
phenomena found many original fields of applications. It can
be used to e1ectr1callY program and erase some types of
nonvolatile memor1es. It can also be used to compensate for
the offset voltage of the very low level signal, high gain
operational amplifiers. Moreover correction ot linearity
erl’Or in A/D converters could be achieved using the llot
carr·~er injection phenomena, [ 15, 20, 23, 45, 57, 58].