الفهرس 
chapter 1Only 14 pages are availabe for public view
 |  | from | 167 |  |  |
| | | from | 167 | | |
Abstract
The powder of CuTPP exhibits a polycrystalline structure with triclinic and The polycrystalline structure of the powder of CuTPP becomes nano-crystalline structure upon thermal deposition. The spectral behavior of transmittance, T() and reflectance R() showed that the as deposited films are good absorbers for light in the wavelength range (200- 800nm) and it is optically transparent in the range (800-2500nm). The dispersion parameters such as oscillator energy, dispersion energy, dielectric constant at high frequency, lattice dielectric constant and the ratio of the free carrier concentration to its effective mass for the as deposited film are 2.30eV, 8.06eV, 5.19, 5.18 and 3х1046 g-1.cm-3, respectively. Annealing and light exposure influenced on the dispersion parameters of CuTPP film. The AC conductivity of CuTPP is controlled by the correlated barrier hopping model (CBH model). I–V characteristics demonstrated a rectification behavior of heterojunction device. The basic diode parameters such as the ideality factor, series resistance and the barrier height were extracted from the I–V measurement of Au/CuTPP/p-Si/Al. The values of open circuit voltage, short circuit current and voltage at maximum power, current at maximum power, fill factor and power conversion efficiency of the device are determined.