الفهرس | Only 14 pages are availabe for public view |
Abstract Scaling challenges and performance are directing the research into new device structures in the nanoscale regime. Double-Gate (DG), Multi-Gate (MUG) and nanowire MOSFETs are promising candidates to satisfy the requirements of the International Technology Roadmap for Semiconductors (ITRS). In such devices, quantization effects are dominant. Therefore, accurate quantum-based device simulation tools are necessary to interpret experimental results and predict device performance. Among the quantum transport model, the Non-GF) is a promising one. The Real- Space (RS) is the most accurate technique used in the NEGF but heavy in computation. For saving computational burden, Mode-Space (MS) is preferred although its accuracy is questionable. FETMOSS simulator was developed in 2006 by a research group in Faculty of Engineering at Ain shams University. It works under MATLAB environment and based on the numerical solution of Poisson and Schrödinger equations self-consistently. Simulation for quasi 2D DG MOSFETs with Uncoupled Mode Space (UMS) was its goal. This technique is fast but valid for silicon thickness less than 5nm. To overcome this problem, it is enhanced by adding RS technique in 2009. In this thesis, we tried to increase the capabilities of FETMOSS to carry out 2D and 3D simulation with more accurate and efficient techniques for saving computational burden. For 2D simulation, Coupled Mode Space (CMS) is added that has advantage of validity for any silicon thickness unlike the UMS with the same accuracy. Then, new approach is proposed, called Partial Coupled Mode Space (PCMS), which integrate between the advantage of CMS in accuracy and UMS in the reduction in simulation time. Finally, UMS is implemented and integrated into FETMOSS,for 3D simulation, for studying the effect of quantization in the width of the silicon in the device as well as the thickness |