الفهرس 
Physics of Multi-Gate Devices
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Abstract
Scaling challenges and performance are directing the research into new
device structures in the nanoscale regime. Double-Gate (DG), Multi-Gate
(MUG) and nanowire MOSFETs are promising candidates to satisfy the
requirements of the International Technology Roadmap for Semiconductors
(lTRS). In such devices, quantization effects are dominant. Therefore, accurate
quantum-based device simulation tools are necessary to interpret experimental
results and predict device performance. Among the quantum transport model,
the Non-Equilibrium Green’s Function (NEGF) is a promising one. The RealSpace
(RS) is the most accurate technique used in the NEG F but heavy in
computation. For saving computational burden, Mode-Space (MS) is preferred
although its accuracy is questionable.
FETMOSS simulator was developed in 2006 by a research group in
Faculty of Engineering at Ain shams University. It works under MATLAB
environment and based on the numerical solution of Poisson and Schrodinger
equations self-consistently. Simulation for quasi 2D DG MOSFETs with
Uncoupled Mode Space (UMS) was its goal. This technique is fast but valid for
silicon thickness less than Snm. To overcome this problem, it is enhanced by
adding RS technique in 2009. In this thesis, we tried to increase the capabilities
of FETMOSS to carry out 2D and 3D simulation with more accurate and
efficient techniques for saving computational burden. For 2D simulation,
Coupled Mode Space (CMS) is added that has advantage of validity for any
silicon thickness unlike the UMS with the same accuracy. Then, new approach
is proposed, called Partial Coupled Mode Space (PCMS), which integrate
between the advantage of CMS in accuracy and UMS in the reduction in
simulation time. Finally, UMS is implemented and integrated into FETMOSS,
for 3D simulation, for studying the effect of quantization in the width of the
silicon in the device as well as the thickness.