الفهرس 
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Abstract
al though PbS was used for many years as I Rivity, it is not. enough studied from t.he point of view of
Such study together with an optical i nvest.i gate PbS film for solar
Struct.ural characteristics of PbS films were achi ved using line profile analysis of X-ray diffract.ion patt.erns. A
program was writ.ten for X-ray diffract.ion pat.terns
i nst.r ument.al by Fourier
line-shape analysis according to Stokes met.hod. For grain size and microstrain calculat.ions Warren and Averbach method was used. The elect.ric properties were measured using four
selective properties were extracted.
In a series of tests, the thickness was the changing paramet.er while the deposition rate was kept. constant. A rat.e of 2nm/min and subst.rate temperat.ures of 100. 150 and 180°C
Thickness monitor inter~erometically
pre~erred or i entati on wi th < 1 00> ~i bre texture. Thus • the Cl00) plane. which is the more condensed plane in PbS lattice o~ NaCL structure, is parallel to the substrate. The degree o~ orientation increases as the ~ilm thickness increases or the substrate temperature decreases. There~ore. ·,he type o~ pre~erred orientation in case o~ amorphous substrate depends only on the crystal structure o~ the deposited material. A rapid decrease in the residual strain was obtai ned up to about 70nm ~oll owed by slower one wi th ~urther increase o~ the ~ilm thickness. It was observed that
di~~raction equall to its thickness up to 70nm. For thicker ~ilms the values o~ the crystallite size showed no change with increasing the ~ilm thickness.
In order to understand the behviour o~ the electric properties o~ PbS thin ~ilms with the ~ilm thickness as the
o~ resisti vi ty °c ~or two
hours,the scattering was drastically reduced and higher values ~or resistivity were ~ound. The general behaviour o~