الفهرس 
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Abstract
Two different series of two-dimensional electron gas (2DEG) samples were prepared. The first series was grown on Si (001) substrates while the second series was grown on SOI (Silicon On Insulator) substrates. Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) system was used in the growth processes. The general conclusions can be summarized as follows;
1- X-ray photoelectron spectroscopy (XPS) performed, in situ, for some samples having Si buffer layer only, showed that no peaks due to either oxygen or carbon were present.
2- When XPS was done, in situ, for another set of samples having both Si buffer layer and graded Si1-x Gex layer, peaks due to Si and Ge, only, were present indicating that the surface is free from oxygen and carbon.