الفهرس 
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Abstract
192
The ,-ray diffractometer with a short wavelength of 77Ir
can be used for investigation of crystalline solids. It can
expfain the mechanical behaviour (e.g., the stress of silicide
film) and the defects of single crystal (e.g., the
dislocation). The work in this thesis is classified into two
categories by using ,-ray diffractometry as follows:
Studying the mechanical behaviour of silicide films:
Research within the semiconductor industry on refractory
metal silicides has been abundant in recent years. Refractory
metal silicides (e.g., TaSi2) have much lower resistivity and
have been studied extensively as candidate materials for gate
level interconnects for,very large scale integrated circuits
(VLSI):
During preparation of thin films by evaporation of
multilayers (e.g., Si and Ta) or coevaporation, internal or
thermal stresses normally arise in the films. The stresses have
an important influence on the physical properties of the films.
According to the theoretical applications of the ,-ray
diffractometry it is possible to obtain the deformation of the
lattice planes of the Si substrate. from the rocking curve
measurements, it is possible to calculate the radius of
curvature of the substrate. Also by different techniques, the
thickness of the film can be determined. from these
measurements the film stress were calculated.
Their investigations were performed as a function of the
.